15 Description = QObject::tr (
"hicumL2V2p31n verilog device");
18 QObject::tr (
"GICCR constant")
19 +
" ("+QObject::tr (
"A^2s")+
")"));
21 QObject::tr (
"Zero-bias hole charge")
22 +
" ("+QObject::tr (
"Coul")+
")"));
24 QObject::tr (
"High-current correction for 2D and 3D effects")
25 +
" ("+QObject::tr (
"A")+
")"));
27 QObject::tr (
"Weight factor for the low current minority charge")));
29 QObject::tr (
"Emitter minority charge weighting factor in HBTs")));
31 QObject::tr (
"Collector minority charge weighting factor in HBTs")));
33 QObject::tr (
"B-E depletion charge weighting factor in HBTs")));
35 QObject::tr (
"Parameter describing the slope of hjEi(VBE)")));
37 QObject::tr (
"Smoothing parameter for hjEi(VBE) at high voltage")));
39 QObject::tr (
"B-C depletion charge weighting factor in HBTs")));
41 QObject::tr (
"Internal B-E saturation current")
42 +
" ("+QObject::tr (
"A")+
")"));
44 QObject::tr (
"Internal B-E current ideality factor")));
46 QObject::tr (
"Internal B-E recombination saturation current")
47 +
" ("+QObject::tr (
"A")+
")"));
49 QObject::tr (
"Internal B-E recombination current ideality factor")));
51 QObject::tr (
"Peripheral B-E saturation current")
52 +
" ("+QObject::tr (
"A")+
")"));
54 QObject::tr (
"Peripheral B-E current ideality factor")));
56 QObject::tr (
"Peripheral B-E recombination saturation current")
57 +
" ("+QObject::tr (
"A")+
")"));
59 QObject::tr (
"Peripheral B-E recombination current ideality factor")));
61 QObject::tr (
"Non-ideality factor for III-V HBTs")));
63 QObject::tr (
"Base current recombination time constant at B-C barrier for high forward injection")
64 +
" ("+QObject::tr (
"s")+
")"));
66 QObject::tr (
"Internal B-C saturation current")
67 +
" ("+QObject::tr (
"A")+
")"));
69 QObject::tr (
"Internal B-C current ideality factor")));
71 QObject::tr (
"External B-C saturation current")
72 +
" ("+QObject::tr (
"A")+
")"));
74 QObject::tr (
"External B-C current ideality factor")));
76 QObject::tr (
"B-E tunneling saturation current")
77 +
" ("+QObject::tr (
"A")+
")"));
79 QObject::tr (
"Exponent factor for tunneling current")));
81 QObject::tr (
"Specifies the base node connection for the tunneling current")));
83 QObject::tr (
"Avalanche current factor")
84 +
" ("+QObject::tr (
"1/V")+
")"));
86 QObject::tr (
"Exponent factor for avalanche current")
87 +
" ("+QObject::tr (
"Coul")+
")"));
89 QObject::tr (
"Relative TC for FAVL")
90 +
" ("+QObject::tr (
"1/K")+
")"));
92 QObject::tr (
"Relative TC for QAVL")
93 +
" ("+QObject::tr (
"1/K")+
")"));
95 QObject::tr (
"Zero bias internal base resistance")
96 +
" ("+QObject::tr (
"Ohm")+
")"));
98 QObject::tr (
"External base series resistance")
99 +
" ("+QObject::tr (
"Ohm")+
")"));
101 QObject::tr (
"Factor for geometry dependence of emitter current crowding")));
103 QObject::tr (
"Correction factor for modulation by B-E and B-C space charge layer")));
105 QObject::tr (
"Ratio of HF shunt to total internal capacitance (lateral NQS effect)")));
107 QObject::tr (
"Ration of internal to total minority charge")));
109 QObject::tr (
"Emitter series resistance")
110 +
" ("+QObject::tr (
"Ohm")+
")"));
112 QObject::tr (
"External collector series resistance")
113 +
" ("+QObject::tr (
"Ohm")+
")"));
115 QObject::tr (
"Substrate transistor transfer saturation current")
116 +
" ("+QObject::tr (
"A")+
")"));
118 QObject::tr (
"Forward ideality factor of substrate transfer current")));
120 QObject::tr (
"C-S diode saturation current")
121 +
" ("+QObject::tr (
"A")+
")"));
123 QObject::tr (
"Ideality factor of C-S diode current")));
125 QObject::tr (
"Transit time for forward operation of substrate transistor")
126 +
" ("+QObject::tr (
"s")+
")"));
128 QObject::tr (
"Substrate series resistance")
129 +
" ("+QObject::tr (
"Ohm")+
")"));
131 QObject::tr (
"Substrate shunt capacitance")
132 +
" ("+QObject::tr (
"F")+
")"));
134 QObject::tr (
"Internal B-E zero-bias depletion capacitance")
135 +
" ("+QObject::tr (
"F")+
")"));
137 QObject::tr (
"Internal B-E built-in potential")
138 +
" ("+QObject::tr (
"V")+
")"));
140 QObject::tr (
"Internal B-E grading coefficient")));
142 QObject::tr (
"Ratio of maximum to zero-bias value of internal B-E capacitance")));
144 QObject::tr (
"Peripheral B-E zero-bias depletion capacitance")
145 +
" ("+QObject::tr (
"F")+
")"));
147 QObject::tr (
"Peripheral B-E built-in potential")
148 +
" ("+QObject::tr (
"V")+
")"));
150 QObject::tr (
"Peripheral B-E grading coefficient")));
152 QObject::tr (
"Ratio of maximum to zero-bias value of peripheral B-E capacitance")));
154 QObject::tr (
"Internal B-C zero-bias depletion capacitance")
155 +
" ("+QObject::tr (
"F")+
")"));
157 QObject::tr (
"Internal B-C built-in potential")
158 +
" ("+QObject::tr (
"V")+
")"));
160 QObject::tr (
"Internal B-C grading coefficient")));
162 QObject::tr (
"Internal B-C punch-through voltage")
163 +
" ("+QObject::tr (
"V")+
")"));
165 QObject::tr (
"External B-C zero-bias depletion capacitance")
166 +
" ("+QObject::tr (
"F")+
")"));
168 QObject::tr (
"External B-C built-in potential")
169 +
" ("+QObject::tr (
"V")+
")"));
171 QObject::tr (
"External B-C grading coefficient")));
173 QObject::tr (
"External B-C punch-through voltage")
174 +
" ("+QObject::tr (
"V")+
")"));
176 QObject::tr (
"Partitioning factor of parasitic B-C cap")));
178 QObject::tr (
"Partitioning factor of parasitic B-E cap")));
180 QObject::tr (
"C-S zero-bias depletion capacitance")
181 +
" ("+QObject::tr (
"F")+
")"));
183 QObject::tr (
"C-S built-in potential")
184 +
" ("+QObject::tr (
"V")+
")"));
186 QObject::tr (
"C-S grading coefficient")));
188 QObject::tr (
"C-S punch-through voltage")
189 +
" ("+QObject::tr (
"V")+
")"));
191 QObject::tr (
"Low current forward transit time at VBC=0V")
192 +
" ("+QObject::tr (
"s")+
")"));
194 QObject::tr (
"Time constant for base and B-C space charge layer width modulation")
195 +
" ("+QObject::tr (
"s")+
")"));
197 QObject::tr (
"Time constant for modeling carrier jam at low VCE")
198 +
" ("+QObject::tr (
"s")+
")"));
200 QObject::tr (
"Neutral emitter storage time")
201 +
" ("+QObject::tr (
"s")+
")"));
203 QObject::tr (
"Exponent factor for current dependence of neutral emitter storage time")));
205 QObject::tr (
"Saturation time constant at high current densities")
206 +
" ("+QObject::tr (
"s")+
")"));
208 QObject::tr (
"Smoothing factor for current dependence of base and collector transit time")));
210 QObject::tr (
"Partitioning factor for base and collector portion")));
212 QObject::tr (
"Internal collector resistance at low electric field")
213 +
" ("+QObject::tr (
"Ohm")+
")"));
215 QObject::tr (
"Voltage separating ohmic and saturation velocity regime")
216 +
" ("+QObject::tr (
"V")+
")"));
218 QObject::tr (
"Internal C-E saturation voltage")
219 +
" ("+QObject::tr (
"V")+
")"));
221 QObject::tr (
"Collector punch-through voltage")
222 +
" ("+QObject::tr (
"V")+
")"));
224 QObject::tr (
"Storage time for inverse operation")
225 +
" ("+QObject::tr (
"s")+
")"));
227 QObject::tr (
"Barrier voltage")
228 +
" ("+QObject::tr (
"V")+
")"));
230 QObject::tr (
"Normalization parameter")
231 +
" ("+QObject::tr (
"A")+
")"));
233 QObject::tr (
"Smoothing parameter for barrier voltage")));
235 QObject::tr (
"fitting factor for critical current")));
237 QObject::tr (
"Total parasitic B-E capacitance")
238 +
" ("+QObject::tr (
"F")+
")"));
240 QObject::tr (
"Total parasitic B-C capacitance")
241 +
" ("+QObject::tr (
"F")+
")"));
243 QObject::tr (
"Factor for additional delay time of minority charge")));
245 QObject::tr (
"Factor for additional delay time of transfer current")));
247 QObject::tr (
"Flag for turning on and off of vertical NQS effect")));
249 QObject::tr (
"Flicker noise coefficient")));
251 QObject::tr (
"Flicker noise exponent factor")));
253 QObject::tr (
"Flag for determining where to tag the flicker noise source")));
255 QObject::tr (
"Flag for turning on and off of correlated noise implementation")));
257 QObject::tr (
"Emitter resistance flicker noise coefficient")));
259 QObject::tr (
"Emitter resistance flicker noise exponent factor")));
261 QObject::tr (
"Scaling factor for collector minority charge in direction of emitter width")));
263 QObject::tr (
"Scaling factor for collector minority charge in direction of emitter length")));
265 QObject::tr (
"Bandgap voltage extrapolated to 0 K")
266 +
" ("+QObject::tr (
"V")+
")"));
268 QObject::tr (
"First order relative TC of parameter T0")
269 +
" ("+QObject::tr (
"1/K")+
")"));
271 QObject::tr (
"Second order relative TC of parameter T0")));
273 QObject::tr (
"Temperature exponent for RCI0")));
275 QObject::tr (
"Relative TC of saturation drift velocity")
276 +
" ("+QObject::tr (
"1/K")+
")"));
278 QObject::tr (
"Relative TC of VCES")
279 +
" ("+QObject::tr (
"1/K")+
")"));
281 QObject::tr (
"Temperature exponent of internal base resistance")));
283 QObject::tr (
"Temperature exponent of external base resistance")));
285 QObject::tr (
"Temperature exponent of external collector resistance")));
287 QObject::tr (
"Temperature exponent of emitter resistance")));
289 QObject::tr (
"Temperature exponent of mobility in substrate transistor transit time")));
291 QObject::tr (
"Effective emitter bandgap voltage")
292 +
" ("+QObject::tr (
"V")+
")"));
294 QObject::tr (
"Effective collector bandgap voltage")
295 +
" ("+QObject::tr (
"V")+
")"));
297 QObject::tr (
"Effective substrate bandgap voltage")
298 +
" ("+QObject::tr (
"V")+
")"));
300 QObject::tr (
"Coefficient K1 in T-dependent band-gap equation")));
302 QObject::tr (
"Coefficient K2 in T-dependent band-gap equation")));
304 QObject::tr (
"Exponent coefficient in transfer current temperature dependence")));
306 QObject::tr (
"Exponent coefficient in B-E junction current temperature dependence")));
308 QObject::tr (
"Relative TC of forward current gain for V2.1 model")
309 +
" ("+QObject::tr (
"1/K")+
")"));
311 QObject::tr (
"Bandgap difference between B and B-E junction used for hjEi0 and hf0")
312 +
" ("+QObject::tr (
"V")+
")"));
314 QObject::tr (
"Temperature coefficient for ahjEi")));
316 QObject::tr (
"Temperature coefficient for hjEi0")));
318 QObject::tr (
"Flag for turning on and off self-heating effect")));
320 QObject::tr (
"Thermal resistance")
321 +
" ("+QObject::tr (
"K/W")+
")"));
323 QObject::tr (
"Temperature coefficient for Rth")));
325 QObject::tr (
"First order relative TC of parameter Rth")
326 +
" ("+QObject::tr (
"1/K")+
")"));
328 QObject::tr (
"Thermal capacitance")
329 +
" ("+QObject::tr (
"J/W")+
")"));
331 QObject::tr (
"Flag for compatibility with v2.1 model (0=v2.1)")));
333 QObject::tr (
"Temperature at which parameters are specified")
334 +
" ("+QObject::tr (
"C")+
")"));
336 QObject::tr (
"Temperature change w.r.t. chip temperature for particular transistor")
337 +
" ("+QObject::tr (
"K")+
")"));
339 QObject::tr (
"simulation temperature")));
344 Model =
"hicumL2V2p31n";
351 p->
Props.getFirst()->Value =
Props.getFirst()->Value;
358 Name = QObject::tr(
"HICUM L2 V2.31");
359 BitmapFile = (
char *)
"hicumL2V2p31n";
368 Lines.append(
new Line(-10,-15,-10, 15,QPen(Qt::darkBlue,3)));
369 Lines.append(
new Line(-30, 0,-10, 0,QPen(Qt::darkBlue,2)));
370 Lines.append(
new Line(-10, -5, 0,-15,QPen(Qt::darkBlue,2)));
371 Lines.append(
new Line( 0,-15, 0,-30,QPen(Qt::darkBlue,2)));
372 Lines.append(
new Line(-10, 5, 0, 15,QPen(Qt::darkBlue,2)));
373 Lines.append(
new Line( 0, 15, 0, 30,QPen(Qt::darkBlue,2)));
376 Lines.append(
new Line( 9, 0, 30, 0,QPen(Qt::darkBlue,2)));
377 Lines.append(
new Line( 9, -7, 9, 7,QPen(Qt::darkBlue,3)));
380 Lines.append(
new Line(-30, 20,-20, 20,QPen(Qt::darkBlue,2)));
381 Lines.append(
new Line(-20, 17,-20, 23,QPen(Qt::darkBlue,2)));
384 Lines.append(
new Line( -6, 15, 0, 15,QPen(Qt::darkBlue,2)));
385 Lines.append(
new Line( 0, 9, 0, 15,QPen(Qt::darkBlue,2)));
388 Lines.append(
new Line(-30,-30,-30,-24,QPen(Qt::darkBlue,1)));
389 Lines.append(
new Line(-30,-27,-26,-27,QPen(Qt::darkBlue,1)));
390 Lines.append(
new Line(-26,-30,-26,-24,QPen(Qt::darkBlue,1)));
392 Lines.append(
new Line(-24,-30,-24,-24,QPen(Qt::darkBlue,1)));
394 Lines.append(
new Line(-22,-30,-22,-24,QPen(Qt::darkBlue,1)));
395 Lines.append(
new Line(-22,-30,-19,-30,QPen(Qt::darkBlue,1)));
396 Lines.append(
new Line(-22,-24,-19,-24,QPen(Qt::darkBlue,1)));
398 Lines.append(
new Line(-17,-30,-17,-24,QPen(Qt::darkBlue,1)));
399 Lines.append(
new Line(-14,-30,-14,-24,QPen(Qt::darkBlue,1)));
400 Lines.append(
new Line(-17,-24,-14,-24,QPen(Qt::darkBlue,1)));
402 Lines.append(
new Line(-12,-30,-12,-24,QPen(Qt::darkBlue,1)));
403 Lines.append(
new Line( -8,-30, -8,-24,QPen(Qt::darkBlue,1)));
404 Lines.append(
new Line(-12,-30,-10,-28,QPen(Qt::darkBlue,1)));
405 Lines.append(
new Line( -8,-30,-10,-28,QPen(Qt::darkBlue,1)));
Q3PtrList< Property > Props
Superclass of all schematic drawing elements.
virtual void recreate(Schematic *)
static Element * info(QString &, char *&, bool getNewOne=false)