15   Description = QObject::tr (
"HICUM Level 2 v2.24 verilog device");
 
   18     QObject::tr (
"GICCR constant")
 
   19     +
" ("+QObject::tr (
"A^2s")+
")"));
 
   21     QObject::tr (
"Zero-bias hole charge")
 
   22     +
" ("+QObject::tr (
"Coul")+
")"));
 
   24     QObject::tr (
"High-current correction for 2D and 3D effects")
 
   25     +
" ("+QObject::tr (
"A")+
")"));
 
   27     QObject::tr (
"Emitter minority charge weighting factor in HBTs")));
 
   29     QObject::tr (
"Collector minority charge weighting factor in HBTs")));
 
   31     QObject::tr (
"B-E depletion charge weighting factor in HBTs")));
 
   33     QObject::tr (
"B-C depletion charge weighting factor in HBTs")));
 
   35     QObject::tr (
"Internal B-E saturation current")
 
   36     +
" ("+QObject::tr (
"A")+
")"));
 
   38     QObject::tr (
"Internal B-E current ideality factor")));
 
   40     QObject::tr (
"Internal B-E recombination saturation current")
 
   41     +
" ("+QObject::tr (
"A")+
")"));
 
   43     QObject::tr (
"Internal B-E recombination current ideality factor")));
 
   45     QObject::tr (
"Peripheral B-E saturation current")
 
   46     +
" ("+QObject::tr (
"A")+
")"));
 
   48     QObject::tr (
"Peripheral B-E current ideality factor")));
 
   50     QObject::tr (
"Peripheral B-E recombination saturation current")
 
   51     +
" ("+QObject::tr (
"A")+
")"));
 
   53     QObject::tr (
"Peripheral B-E recombination current ideality factor")));
 
   55     QObject::tr (
"Non-ideality factor for III-V HBTs")));
 
   57     QObject::tr (
"Base current recombination time constant at B-C barrier for high forward injection")
 
   58     +
" ("+QObject::tr (
"s")+
")"));
 
   60     QObject::tr (
"Internal B-C saturation current")
 
   61     +
" ("+QObject::tr (
"A")+
")"));
 
   63     QObject::tr (
"Internal B-C current ideality factor")));
 
   65     QObject::tr (
"External B-C saturation current")
 
   66     +
" ("+QObject::tr (
"A")+
")"));
 
   68     QObject::tr (
"External B-C current ideality factor")));
 
   70     QObject::tr (
"B-E tunneling saturation current")
 
   71     +
" ("+QObject::tr (
"A")+
")"));
 
   73     QObject::tr (
"Exponent factor for tunneling current")));
 
   75     QObject::tr (
"Specifies the base node connection for the tunneling current")));
 
   77     QObject::tr (
"Avalanche current factor")
 
   78     +
" ("+QObject::tr (
"1/V")+
")"));
 
   80     QObject::tr (
"Exponent factor for avalanche current")
 
   81     +
" ("+QObject::tr (
"Coul")+
")"));
 
   83     QObject::tr (
"Relative TC for FAVL")
 
   84     +
" ("+QObject::tr (
"1/K")+
")"));
 
   86     QObject::tr (
"Relative TC for QAVL")
 
   87     +
" ("+QObject::tr (
"1/K")+
")"));
 
   89     QObject::tr (
"Zero bias internal base resistance")
 
   90     +
" ("+QObject::tr (
"Ohm")+
")"));
 
   92     QObject::tr (
"External base series resistance")
 
   93     +
" ("+QObject::tr (
"Ohm")+
")"));
 
   95     QObject::tr (
"Factor for geometry dependence of emitter current crowding")));
 
   97     QObject::tr (
"Correction factor for modulation by B-E and B-C space charge layer")));
 
   99     QObject::tr (
"Ratio of HF shunt to total internal capacitance (lateral NQS effect)")));
 
  101     QObject::tr (
"Ration of internal to total minority charge")));
 
  103     QObject::tr (
"Emitter series resistance")
 
  104     +
" ("+QObject::tr (
"Ohm")+
")"));
 
  106     QObject::tr (
"External collector series resistance")
 
  107     +
" ("+QObject::tr (
"Ohm")+
")"));
 
  109     QObject::tr (
"Substrate transistor transfer saturation current")
 
  110     +
" ("+QObject::tr (
"A")+
")"));
 
  112     QObject::tr (
"Forward ideality factor of substrate transfer current")));
 
  114     QObject::tr (
"C-S diode saturation current")
 
  115     +
" ("+QObject::tr (
"A")+
")"));
 
  117     QObject::tr (
"Ideality factor of C-S diode current")));
 
  119     QObject::tr (
"Transit time for forward operation of substrate transistor")
 
  120     +
" ("+QObject::tr (
"s")+
")"));
 
  122     QObject::tr (
"Substrate series resistance")
 
  123     +
" ("+QObject::tr (
"Ohm")+
")"));
 
  125     QObject::tr (
"Substrate shunt capacitance")
 
  126     +
" ("+QObject::tr (
"F")+
")"));
 
  128     QObject::tr (
"Internal B-E zero-bias depletion capacitance")
 
  129     +
" ("+QObject::tr (
"F")+
")"));
 
  131     QObject::tr (
"Internal B-E built-in potential")
 
  132     +
" ("+QObject::tr (
"V")+
")"));
 
  134     QObject::tr (
"Internal B-E grading coefficient")));
 
  136     QObject::tr (
"Ratio of maximum to zero-bias value of internal B-E capacitance")));
 
  138     QObject::tr (
"Peripheral B-E zero-bias depletion capacitance")
 
  139     +
" ("+QObject::tr (
"F")+
")"));
 
  141     QObject::tr (
"Peripheral B-E built-in potential")
 
  142     +
" ("+QObject::tr (
"V")+
")"));
 
  144     QObject::tr (
"Peripheral B-E grading coefficient")));
 
  146     QObject::tr (
"Ratio of maximum to zero-bias value of peripheral B-E capacitance")));
 
  148     QObject::tr (
"Internal B-C zero-bias depletion capacitance")
 
  149     +
" ("+QObject::tr (
"F")+
")"));
 
  151     QObject::tr (
"Internal B-C built-in potential")
 
  152     +
" ("+QObject::tr (
"V")+
")"));
 
  154     QObject::tr (
"Internal B-C grading coefficient")));
 
  156     QObject::tr (
"Internal B-C punch-through voltage")
 
  157     +
" ("+QObject::tr (
"V")+
")"));
 
  159     QObject::tr (
"External B-C zero-bias depletion capacitance")
 
  160     +
" ("+QObject::tr (
"F")+
")"));
 
  162     QObject::tr (
"External B-C built-in potential")
 
  163     +
" ("+QObject::tr (
"V")+
")"));
 
  165     QObject::tr (
"External B-C grading coefficient")));
 
  167     QObject::tr (
"External B-C punch-through voltage")
 
  168     +
" ("+QObject::tr (
"V")+
")"));
 
  170     QObject::tr (
"Partitioning factor of parasitic B-C cap")));
 
  172     QObject::tr (
"Partitioning factor of parasitic B-E cap")));
 
  174     QObject::tr (
"C-S zero-bias depletion capacitance")
 
  175     +
" ("+QObject::tr (
"F")+
")"));
 
  177     QObject::tr (
"C-S built-in potential")
 
  178     +
" ("+QObject::tr (
"V")+
")"));
 
  180     QObject::tr (
"C-S grading coefficient")));
 
  182     QObject::tr (
"C-S punch-through voltage")
 
  183     +
" ("+QObject::tr (
"V")+
")"));
 
  185     QObject::tr (
"Low current forward transit time at VBC=0V")
 
  186     +
" ("+QObject::tr (
"s")+
")"));
 
  188     QObject::tr (
"Time constant for base and B-C space charge layer width modulation")
 
  189     +
" ("+QObject::tr (
"s")+
")"));
 
  191     QObject::tr (
"Time constant for modelling carrier jam at low VCE")
 
  192     +
" ("+QObject::tr (
"s")+
")"));
 
  194     QObject::tr (
"Neutral emitter storage time")
 
  195     +
" ("+QObject::tr (
"s")+
")"));
 
  197     QObject::tr (
"Exponent factor for current dependence of neutral emitter storage time")));
 
  199     QObject::tr (
"Saturation time constant at high current densities")
 
  200     +
" ("+QObject::tr (
"s")+
")"));
 
  202     QObject::tr (
"Smoothing factor for current dependence of base and collector transit time")));
 
  204     QObject::tr (
"Partitioning factor for base and collector portion")));
 
  206     QObject::tr (
"Internal collector resistance at low electric field")
 
  207     +
" ("+QObject::tr (
"Ohm")+
")"));
 
  209     QObject::tr (
"Voltage separating ohmic and saturation velocity regime")
 
  210     +
" ("+QObject::tr (
"V")+
")"));
 
  212     QObject::tr (
"Internal C-E saturation voltage")
 
  213     +
" ("+QObject::tr (
"V")+
")"));
 
  215     QObject::tr (
"Collector punch-through voltage")
 
  216     +
" ("+QObject::tr (
"V")+
")"));
 
  218     QObject::tr (
"Storage time for inverse operation")
 
  219     +
" ("+QObject::tr (
"s")+
")"));
 
  221     QObject::tr (
"Total parasitic B-E capacitance")
 
  222     +
" ("+QObject::tr (
"F")+
")"));
 
  224     QObject::tr (
"Total parasitic B-C capacitance")
 
  225     +
" ("+QObject::tr (
"F")+
")"));
 
  227     QObject::tr (
"Factor for additional delay time of minority charge")));
 
  229     QObject::tr (
"Factor for additional delay time of transfer current")));
 
  231     QObject::tr (
"Flag for turning on and off of vertical NQS effect")));
 
  233     QObject::tr (
"Flicker noise coefficient")));
 
  235     QObject::tr (
"Flicker noise exponent factor")));
 
  237     QObject::tr (
"Flag for determining where to tag the flicker noise source")));
 
  239     QObject::tr (
"Scaling factor for collector minority charge in direction of emitter width")));
 
  241     QObject::tr (
"Scaling factor for collector minority charge in direction of emitter length")));
 
  243     QObject::tr (
"Bandgap voltage extrapolated to 0 K")
 
  244     +
" ("+QObject::tr (
"V")+
")"));
 
  246     QObject::tr (
"First order relative TC of parameter T0")
 
  247     +
" ("+QObject::tr (
"1/K")+
")"));
 
  249     QObject::tr (
"Second order relative TC of parameter T0")));
 
  251     QObject::tr (
"Temperature exponent for RCI0")));
 
  253     QObject::tr (
"Relative TC of saturation drift velocity")
 
  254     +
" ("+QObject::tr (
"1/K")+
")"));
 
  256     QObject::tr (
"Relative TC of VCES")
 
  257     +
" ("+QObject::tr (
"1/K")+
")"));
 
  259     QObject::tr (
"Temperature exponent of internal base resistance")));
 
  261     QObject::tr (
"Temperature exponent of external base resistance")));
 
  263     QObject::tr (
"Temperature exponent of external collector resistance")));
 
  265     QObject::tr (
"Temperature exponent of emitter resistance")));
 
  267     QObject::tr (
"Temperature exponent of mobility in substrate transistor transit time")));
 
  269     QObject::tr (
"Effective emitter bandgap voltage")
 
  270     +
" ("+QObject::tr (
"V")+
")"));
 
  272     QObject::tr (
"Effective collector bandgap voltage")
 
  273     +
" ("+QObject::tr (
"V")+
")"));
 
  275     QObject::tr (
"Effective substrate bandgap voltage")
 
  276     +
" ("+QObject::tr (
"V")+
")"));
 
  278     QObject::tr (
"Coefficient K1 in T-dependent band-gap equation")));
 
  280     QObject::tr (
"Coefficient K2 in T-dependent band-gap equation")));
 
  282     QObject::tr (
"Exponent coefficient in transfer current temperature dependence")));
 
  284     QObject::tr (
"Exponent coefficient in B-E junction current temperature dependence")));
 
  286     QObject::tr (
"Relative TC of forward current gain for V2.1 model")
 
  287     +
" ("+QObject::tr (
"1/K")+
")"));
 
  289     QObject::tr (
"Flag for turning on and off self-heating effect")));
 
  291     QObject::tr (
"Thermal resistance")
 
  292     +
" ("+QObject::tr (
"K/W")+
")"));
 
  294     QObject::tr (
"Thermal capacitance")
 
  295     +
" ("+QObject::tr (
"J/W")+
")"));
 
  297     QObject::tr (
"Flag for compatibility with v2.1 model (0=v2.1)")));
 
  299     QObject::tr (
"Temperature at which parameters are specified")
 
  300     +
" ("+QObject::tr (
"C")+
")"));
 
  302     QObject::tr (
"Temperature change w.r.t. chip temperature for particular transistor")
 
  303     +
" ("+QObject::tr (
"K")+
")"));
 
  305     QObject::tr (
"simulation temperature")));
 
  310   Model = 
"hicumL2V2p24";
 
  317   p->
Props.getFirst()->Value = 
Props.getFirst()->Value; 
 
  324   Name = QObject::tr(
"HICUM L2 v2.24");
 
  325   BitmapFile = (
char *) 
"npnsub_therm";
 
  334   Lines.append(
new Line(-10,-15,-10, 15,QPen(Qt::darkBlue,3)));
 
  335   Lines.append(
new Line(-30,  0,-10,  0,QPen(Qt::darkBlue,2)));
 
  336   Lines.append(
new Line(-10, -5,  0,-15,QPen(Qt::darkBlue,2)));
 
  337   Lines.append(
new Line(  0,-15,  0,-30,QPen(Qt::darkBlue,2)));
 
  338   Lines.append(
new Line(-10,  5,  0, 15,QPen(Qt::darkBlue,2)));
 
  339   Lines.append(
new Line(  0, 15,  0, 30,QPen(Qt::darkBlue,2)));
 
  342   Lines.append(
new Line(  9,  0, 30,  0,QPen(Qt::darkBlue,2)));
 
  343   Lines.append(
new Line(  9, -7,  9,  7,QPen(Qt::darkBlue,3)));
 
  346   Lines.append(
new Line(-30, 20,-20, 20,QPen(Qt::darkBlue,2)));
 
  347   Lines.append(
new Line(-20, 17,-20, 23,QPen(Qt::darkBlue,2)));  
 
  350   Lines.append(
new Line( -6, 15,  0, 15,QPen(Qt::darkBlue,2)));
 
  351   Lines.append(
new Line(  0,  9,  0, 15,QPen(Qt::darkBlue,2)));
 
  354   Lines.append(
new Line(-30,-30,-30,-24,QPen(Qt::darkBlue,1)));
 
  355   Lines.append(
new Line(-30,-27,-26,-27,QPen(Qt::darkBlue,1)));
 
  356   Lines.append(
new Line(-26,-30,-26,-24,QPen(Qt::darkBlue,1)));
 
  358   Lines.append(
new Line(-24,-30,-24,-24,QPen(Qt::darkBlue,1)));
 
  360   Lines.append(
new Line(-22,-30,-22,-24,QPen(Qt::darkBlue,1)));
 
  361   Lines.append(
new Line(-22,-30,-19,-30,QPen(Qt::darkBlue,1)));
 
  362   Lines.append(
new Line(-22,-24,-19,-24,QPen(Qt::darkBlue,1)));
 
  364   Lines.append(
new Line(-17,-30,-17,-24,QPen(Qt::darkBlue,1)));
 
  365   Lines.append(
new Line(-14,-30,-14,-24,QPen(Qt::darkBlue,1)));
 
  366   Lines.append(
new Line(-17,-24,-14,-24,QPen(Qt::darkBlue,1)));
 
  368   Lines.append(
new Line(-12,-30,-12,-24,QPen(Qt::darkBlue,1)));
 
  369   Lines.append(
new Line( -8,-30, -8,-24,QPen(Qt::darkBlue,1)));
 
  370   Lines.append(
new Line(-12,-30,-10,-28,QPen(Qt::darkBlue,1)));
 
  371   Lines.append(
new Line( -8,-30,-10,-28,QPen(Qt::darkBlue,1)));
 
Q3PtrList< Property > Props
Superclass of all schematic drawing elements. 
static Element * info(QString &, char *&, bool getNewOne=false)
virtual void recreate(Schematic *)