16 Description = QObject::tr (
"EPFL-EKV MOS 2.6 verilog device");
19 QObject::tr (
"polarity") +
" [nmos, pmos]"));
21 QObject::tr (
"long = 1, short = 2")));
23 QObject::tr (
"length parameter")
24 +
" ("+QObject::tr (
"m")+
")"));
26 QObject::tr (
"Width parameter")
27 +
" ("+QObject::tr (
"m")+
")"));
29 QObject::tr (
"parallel multiple device number")));
31 QObject::tr (
"series multiple device number")));
33 QObject::tr (
"gate oxide capacitance per unit area")
34 +
" ("+QObject::tr (
"F/m**2")+
")"));
36 QObject::tr (
"metallurgical junction depth")
37 +
" ("+QObject::tr (
"m")+
")"));
39 QObject::tr (
"channel width correction")
40 +
" ("+QObject::tr (
"m")+
")"));
42 QObject::tr (
"channel length correction")
43 +
" ("+QObject::tr (
"m")+
")"));
45 QObject::tr (
"long channel threshold voltage")
46 +
" ("+QObject::tr (
"V")+
")"));
48 QObject::tr (
"body effect parameter")
49 +
" ("+QObject::tr (
"V**(1/2)")+
")"));
51 QObject::tr (
"bulk Fermi potential")
52 +
" ("+QObject::tr (
"V")+
")"));
54 QObject::tr (
"transconductance parameter")
55 +
" ("+QObject::tr (
"A/V**2")+
")"));
57 QObject::tr (
"mobility reduction coefficient")
58 +
" ("+QObject::tr (
"1/V")+
")"));
60 QObject::tr (
"mobility coefficient")
61 +
" ("+QObject::tr (
"V/m")+
")"));
63 QObject::tr (
"longitudinal critical field")
64 +
" ("+QObject::tr (
"V/m")+
")"));
66 QObject::tr (
"depletion length coefficient")));
68 QObject::tr (
"narrow-channel effect coefficient")));
70 QObject::tr (
"longitudinal critical field")));
72 QObject::tr (
"reverse short channel charge density")
73 +
" ("+QObject::tr (
"A*s/m**2")+
")"));
75 QObject::tr (
"characteristic length")
76 +
" ("+QObject::tr (
"m")+
")"));
78 QObject::tr (
"threshold voltage temperature coefficient")
79 +
" ("+QObject::tr (
"V/K")+
")"));
81 QObject::tr (
"mobility temperature coefficient")));
83 QObject::tr (
"Longitudinal critical field temperature exponent")));
85 QObject::tr (
"Ibb temperature coefficient")
86 +
" ("+QObject::tr (
"1/K")+
")"));
88 QObject::tr (
"heavily doped diffusion length")
89 +
" ("+QObject::tr (
"m")+
")"));
91 QObject::tr (
"drain/source diffusion sheet resistance")
92 +
" ("+QObject::tr (
"Ohm/square")+
")"));
94 QObject::tr (
"source contact resistance")
95 +
" ("+QObject::tr (
"Ohm")+
")"));
97 QObject::tr (
"drain contact resistance")
98 +
" ("+QObject::tr (
"Ohm")+
")"));
100 QObject::tr (
"gate to source overlap capacitance")
101 +
" ("+QObject::tr (
"F/m")+
")"));
103 QObject::tr (
"gate to drain overlap capacitance")
104 +
" ("+QObject::tr (
"F/m")+
")"));
106 QObject::tr (
"gate to bulk overlap capacitance")
107 +
" ("+QObject::tr (
"F/m")+
")"));
109 QObject::tr (
"first impact ionization coefficient")
110 +
" ("+QObject::tr (
"1/m")+
")"));
112 QObject::tr (
"second impact ionization coefficient")
113 +
" ("+QObject::tr (
"V/m")+
")"));
115 QObject::tr (
"saturation voltage factor for impact ionization")));
117 QObject::tr (
"flicker noise coefficient")));
119 QObject::tr (
"flicker noise exponent")));
121 QObject::tr (
"area related theshold voltage mismatch parameter")
122 +
" ("+QObject::tr (
"V*m")+
")"));
124 QObject::tr (
"area related gain mismatch parameter")
125 +
" ("+QObject::tr (
"m")+
")"));
127 QObject::tr (
"area related body effect mismatch parameter")
128 +
" ("+QObject::tr (
"sqrt(V)*m")+
")"));
130 QObject::tr (
"emission coefficient")));
132 QObject::tr (
"saturation current")
133 +
" ("+QObject::tr (
"A")+
")"));
135 QObject::tr (
"reverse breakdown voltage")
136 +
" ("+QObject::tr (
"V")+
")"));
138 QObject::tr (
"current at reverse breakdown voltage")
139 +
" ("+QObject::tr (
"A")+
")"));
141 QObject::tr (
"junction potential")
142 +
" ("+QObject::tr (
"V")+
")"));
144 QObject::tr (
"zero-bias junction capacitance")
145 +
" ("+QObject::tr (
"F")+
")"));
147 QObject::tr (
"grading coefficient")));
149 QObject::tr (
"diode relative area")));
151 QObject::tr (
"forward-bias depletion capacitance coefficient")));
153 QObject::tr (
"transit time")
154 +
" ("+QObject::tr (
"s")+
")"));
156 QObject::tr (
"saturation current temperature exponent")));
158 QObject::tr (
"charge partition parameter")));
160 QObject::tr (
"parameter measurement temperature")
161 +
" ("+QObject::tr (
"Celsius")+
")"));
163 QObject::tr (
"simulation temperature")));
182 Name = QObject::tr(
"EPFL-EKV NMOS 2.6");
183 BitmapFile = (
char *)
"EKV26nMOS";
185 if(getNewOne)
return new EKV26MOS();
191 Name = QObject::tr(
"EPFL-EKV PMOS 2.6");
192 BitmapFile = (
char *)
"EKV26pMOS";
226 Lines.append(
new Line(-14,-13,-14, 13,QPen(Qt::darkBlue,3)));
227 Lines.append(
new Line(-30, 0,-14, 0,QPen(Qt::darkBlue,2)));
228 Lines.append(
new Line(-10,-11, 0,-11,QPen(Qt::darkBlue,2)));
229 Lines.append(
new Line( 0,-11, 0,-30,QPen(Qt::darkBlue,2)));
231 Lines.append(
new Line(-10, 11, 0, 11,QPen(Qt::darkBlue,2)));
232 Lines.append(
new Line( 0, 11, 0, 30,QPen(Qt::darkBlue,2)));
233 Lines.append(
new Line(-10, 0, 20, 0,QPen(Qt::darkBlue,2)));
234 Lines.append(
new Line(-10,-16,-10, -7,QPen(Qt::darkBlue,3)));
236 Lines.append(
new Line(-10, 7,-10, 16,QPen(Qt::darkBlue,3)));
237 Lines.append(
new Line( -4, 24, 4, 20,QPen(Qt::darkBlue,2)));
241 Lines.append(
new Line( -9, 0, -4, -5,QPen(Qt::darkBlue,2)));
242 Lines.append(
new Line( -9, 0, -4, 5,QPen(Qt::darkBlue,2)));
244 Lines.append(
new Line( -5, 5, 0, 0,QPen(Qt::darkBlue,2)));
245 Lines.append(
new Line( -5, -5, 0, 0,QPen(Qt::darkBlue,2)));
248 Lines.append(
new Line(-10, -3,-10, 3,QPen(Qt::darkBlue,3)));
249 Lines.append(
new Line(-10, -8,-10, -6,QPen(Qt::darkBlue,3)));
250 Lines.append(
new Line(-10, 8,-10, 6,QPen(Qt::darkBlue,3)));
253 Lines.append(
new Line(-30,-30,-30,-24,QPen(Qt::darkBlue,1)));
254 Lines.append(
new Line(-30,-30,-26,-30,QPen(Qt::darkBlue,1)));
255 Lines.append(
new Line(-30,-27,-26,-27,QPen(Qt::darkBlue,1)));
256 Lines.append(
new Line(-30,-24,-26,-24,QPen(Qt::darkBlue,1)));
258 Lines.append(
new Line(-24,-30,-24,-24,QPen(Qt::darkBlue,1)));
259 Lines.append(
new Line(-24,-27,-20,-30,QPen(Qt::darkBlue,1)));
260 Lines.append(
new Line(-24,-27,-20,-24,QPen(Qt::darkBlue,1)));
262 Lines.append(
new Line(-18,-30,-16,-24,QPen(Qt::darkBlue,1)));
263 Lines.append(
new Line(-14,-30,-16,-24,QPen(Qt::darkBlue,1)));
280 s +=
" "+p1->Connection->Name;
284 if(p2->Value ==
"nmos")
290 for(p2 =
Props.next(); p2 != 0; p2 =
Props.next())
291 s +=
" "+p2->Name+
"=\""+p2->Value+
"\"";
static Element * info_pmos(QString &, char *&, bool getNewOne=false)
Q3PtrList< Property > Props
Superclass of all schematic drawing elements.
void recreate(Schematic *)
static Element * info(QString &, char *&, bool getNewOne=false)
Property * getProperty(const QString &)